Some common power devices are the power diode, thyristor, power MOSFET and IGBT (insulated gate bipolar transistor). A power diode or MOSFET, for example, operates on similar principles as its low-power counterpart, but is able to carry a larger amount of current and typically is able to support a larger reverse-bias voltage in the off-state.

Structural changes are often made in power devices to accommodate the higher current density, higher power dissipation and/or higher reverse breakdown voltage. The vast majority of the discrete (i.e non integrated) power devices are built using a vertical structure, whereas small-signal devices employ a lateral structure. With the vertical structure, the current rating of the device is proportional to its area, and the voltage blocking capability is achieved in the height of the die. With this structure, one of the connections of the device is located on the bottom of the semiconductor [die].

Power semiconductor devices are only used in commutation mode (i.e they are either on or off), and are therefore optimised for this. Most of them shouldn’t be used in linear operation.

Inverse voltage: The amount of voltage a diode can hold off when reversed before breaking down.

Maximum Current: I think you can figure out what that means.

VForward: The amount of voltage a diode drops when in forward conduction (typically .693 for silicon devices).